GaN GaN material is stable and hard, its melting point is about 1700℃, and it can work at high temperature above 200℃ after being made into GaN power devices (GaNFET). GaN has 3 times larger band width, 10 times higher breakdown field strength, 3 times faster saturation electron migration, and 2 times higher thermal conductivity than silicon, which makes it more suitable for high power and high frequency power devices.
If the AC power in the power jack is an endless lake, the power device in the charger is like a spoon, the need to constantly fish out the lake in the jack, converted into DC power and then transmitted to the digital device power. At this time, the spoon made of MOSFETs can only spoon 10 times per second, and then faster there is a risk of burnout strike. While GaNFETs do the spoon can be spooned at least 30 times per second, high efficiency is not afraid of tired.
With the help of this low loss and high switching frequency characteristics, GaN can withstand more power with lower heat generation. Therefore, the power of the same charger, the use of GaNFET power devices can often be made lighter and more miniature products.
